SPICE model of drain induced barrier lowering in sub-10 nm junctionless cylindrical surrounding gate MOSFET
نویسندگان
چکیده
منابع مشابه
Explicit Model of Cylindrical Surrounding Double-Gate MOSFET
We present an analytical and continuous dc model for undoped cylindrical surrounding double-gate (CSDG) MOSFETs for which the drain current and subthreshold model is written as an explicit function of the applied voltages for the wireless telecommunication systems to operate at the microwave frequency regime of the spectrum. The model is based on a unified charge control model developed for thi...
متن کاملAnalytical drain current model reproducing advanced transport models in nanoscale cylindrical surrounding-gate (SRG) MOSFETs
In this paper we extend a compact surrounding-gate MOSFET model to include the hydrodynamic transport and quantum mechanical effects, and we show that it can reproduce the results of 3D numerical simulations using advanced transport models. A template device representative for the cylindrical surrounding-gate MOSFET was used to validate the model. The final compact model includes mobility degra...
متن کاملPatterning Sub-30-nm MOSFET Gate with -Line Lithography
We have investigated two process techniques: resist ashing and oxide hard mask trimming. A combination of ashing and trimming produces sub-30-nm MOSFET gate. These techniques require neither specific equipment nor materials. These can be used to fabricate experimental devices with line width beyond the limit of optical lithography or high-throughput -beam lithography. They provide 25-nm gate pa...
متن کاملTesting of Cylindrical Surrounding Double-Gate MOSFET Parameters Using Image Acquisition
In this paper, we have analyzed the image acquisition of the Cylindrical Surrounding Double-Gate (CSDG) MOSFETs for the purpose of RF switch for the advanced wireless telecommunication systems. The proposed model will emphasize on the basics structure of the single image sensor for two dimensional images of a three dimension devices, so that we can obtained a satisfied or say smooth device stru...
متن کاملA 20 nm gate-length ultra-thin body p-MOSFET with silicide source/drain
As the scaling of CMOS transistors extends to the sub-20 nm regime, the most challenging aspect of device design is the control of the off-state current. The traditional methods for controlling leakage current via the substrate doping profile will be difficult to implement at these dimensions. A promising method for controlling leakage in sub-20 nm transistors is the reduction in source-to-drai...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: International Journal of Electrical and Computer Engineering (IJECE)
سال: 2020
ISSN: 2088-8708,2088-8708
DOI: 10.11591/ijece.v10i2.pp1288-1295